Electron backscattering from stacking faults in SiC by means of \textit{ab initio} quantum transport calculations

TL;DR

This study uses  ab initio quantum transport calculations to analyze how stacking faults in SiC cause electron backscattering, impacting device performance by increasing resistance.

Contribution

It provides the first detailed quantum transport analysis of stacking fault-induced backscattering in SiC using density functional theory.

Findings

Stacking faults create dispersive bands with high density of states.

SFs significantly increase resistance in n-doped SiC.

Resonant scattering from SFs degrades device operation.

Abstract

We study coherent backscattering phenomena from single and multiple stacking faults (SFs) in 3C- and 4H-SiC within density functional theory quantum transport calculations. We show that SFs give rise to highly dispersive bands within both the valance and conduction bands that can be distinguished for their enhanced density of states at particular wave number subspaces. The consequent localized perturbation potential significantly scatters the propagating electron waves and strongly increases the resistance for $n$-doped systems. We argue that resonant scattering from SFs should be one of the principal degrading mechanisms for device operation in silicon carbide.