Weak localization of holes in high-mobility heterostructures

TL;DR

This paper develops a theory for weak localization of holes in high-mobility semiconductor heterostructures, revealing complex behaviors like transition to anti-localization and non-monotonous temperature dependence of conductivity.

Contribution

It introduces a detailed theoretical model accounting for anisotropic scattering and spin relaxation effects specific to holes, advancing understanding of quantum interference in these systems.

Findings

Transition from weak localization to anti-localization with increasing dephasing time

Negative conductivity correction at all hole densities for strong dephasing

Non-monotonous temperature dependence of conductivity at moderate hole densities

Abstract

Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to anti-localization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to non-monotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is non-monotonous at moderate hole densities.