Silicon Quantum Electronics

TL;DR

This review highlights recent significant advances in silicon-based quantum dots and dopant systems, emphasizing progress in materials, quantum effects, and spin qubit development crucial for quantum computing.

Contribution

It provides a comprehensive overview of recent breakthroughs in silicon quantum electronics, including single-electron control and spin read-out techniques, advancing the field towards practical spin qubits.

Findings

Isolation of single electrons in silicon

Observation of spin blockade in silicon quantum dots

Single-shot read-out of electron spins in silicon

Abstract

This review describes recent groundbreaking results in Si, Si/SiGe and dopant-based quantum dots, and it highlights the remarkable advances in Si-based quantum physics that have occurred in the past few years. This progress has been possible thanks to materials development for both Si quantum devices, and thanks to the physical understanding of quantum effects in silicon. Recent critical steps include the isolation of single electrons, the observation of spin blockade and single-shot read-out of individual electron spins in both dopants and gated quantum dots in Si. Each of these results has come with physics that was not anticipated from previous work in other material systems. These advances underline the significant progress towards the realization of spin quantum bits in a material with a long spin coherence time, crucial for quantum computation and spintronics.