Influence of linearly polarized radiation on magnetoresistance in irradiated two-dimensional electron systems

TL;DR

This study investigates how the polarization angle of linearly polarized radiation affects magnetoresistance oscillations in two-dimensional electron systems, revealing conditions where polarization influences or becomes immune to the effects.

Contribution

It demonstrates that the polarization angle impacts magnetoresistance in high-quality, low-temperature samples, while immunity appears in lower-quality, higher-temperature samples, using the radiation-driven electron orbits model.

Findings

Polarization affects magnetoresistance in high-quality samples at low temperatures.

Immunity to polarization effects occurs in lower-quality samples at higher temperatures.

The results have implications for future photoelectronics in mesoscopic devices.

Abstract

We study the influence of the polarization angle of linear radiation on the radiation-induced magnetoresistance oscillations in two-dimensional electron systems and examine the polarization immunity on the temperature and quality of the sample. We have applied the radiation-driven electron orbits model obtaining that the magnetoresistance is affected by the orientation of the electric field of linearly polarized radiation when dealing with high quality samples and low temperatures. Yet, for lower quality samples and higher temperature, we recover polarization immunity in the radiation driven magnetoresistance oscillations. This could be of interest for future photoelectronics in high quality mesoscopic devices. VC 2012 American Institute of Physics