Optimizing thermoelectric properties of filled MPt$_4$Ge$_{12-x}$Sb$_x$ skutterudites by band engineering
M. X. Chen, R. Podloucky, S. Humer, E. Bauer, P. Rogl

TL;DR
This study uses density functional theory to optimize the thermoelectric properties of Sb-doped skutterudites, predicting significant improvements in Seebeck coefficients and thermal properties, supported by experimental validation.
Contribution
It introduces a band engineering approach to enhance thermoelectric performance in filled MPt4Ge12-xSbx skutterudites, identifying optimal doping levels for improved efficiency.
Findings
Seebeck coefficient increased by over 10 times with doping
Optimal doping aligns with a 'magic' valence electron count
La-based skutterudites show low thermal conductivity and high thermoelectric potential
Abstract
On the basis of density functional theory (DFT) calculations thermoelectric properties are derived for Sb-doped skutterudites MPtGeSb with M=Ba,La,Th. It is predicted that the originally very small absolute values of Seebeck coefficients of the undoped compounds is increased by factors of 10 or more for suitable dopings. The optimal dopings correspond to a "magic" valence electron number for which all electronic states up to a (pseudo)gap are filled. The theoretical findings are corroborated by measurements of for LaPtGeSb skutterudites. DFT derived vibrational rattling-like modes for LaPtGe indicate a small value for the lattice thermal conductivity which in combination with a large value of makes the La-based skutterudites appear as promising thermoelectric materials.
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Taxonomy
TopicsAdvanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
