Tuning hole mobility in InP nanowires

TL;DR

This paper investigates how strain, temperature, and nanowire size influence hole mobility in InP nanowires by combining theoretical calculations and molecular dynamics simulations, revealing resonance effects that significantly alter mobility.

Contribution

It introduces a comprehensive approach combining electron-phonon interaction calculations and molecular dynamics to study hole transport in InP nanowires under various conditions.

Findings

Mobility changes drastically at LO-phonon resonance.

Valence band character shifts between light- and heavy-hole states.

Strain and size significantly influence hole transport properties.

Abstract

Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.