Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling

TL;DR

This paper investigates quantum interference effects in topological insulator thin films, deriving analytical formulas for magnetoresistance influenced by bulk doping and tunneling, revealing conditions for weak localization and antilocalization.

Contribution

It provides the first analytical expressions linking bulk-surface coupling and doping to quantum corrections in topological insulator thin films.

Findings

Parameter regimes for weak localization and antilocalization identified

Analytical formulas for low-field magnetoresistance derived

Includes diffusive Weyl semimetals as a special case

Abstract

We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional (3D) topological insulator (TI). We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.