Magnetic field dependent impact ionization in InSb

TL;DR

This paper investigates how magnetic fields influence impact ionization and recombination in InSb, proposing an analytic model for threshold electric field dependence, with implications for magnetic field-controlled electrical switching devices.

Contribution

It introduces a simple analytic expression for the threshold electric field in InSb as a function of magnetic field, highlighting magnetic suppression of impact ionization and polarity-dependent surface recombination.

Findings

Magnetic field suppresses impact ionization in InSb.

Surface recombination varies with magnetic field polarity.

Threshold electric field depends quadratically and linearly on magnetic field.

Abstract

Carrier generation by impact ionization and subsequent recombination under the influence of magnetic field has been studied for InSb slab. A simple analytic expression for threshold electric field as a function of magnetic field is proposed. Impact ionization is suppressed by magnetic field. However, surface recombination is dependent on the polarity of magnetic field: strengthened in one direction and suppressed on the opposite direction. The former contributes quadratic increase to threshold electric field, and the latter gives additional linear dependence on magnetic field. Based on this study, electrical switching devices driven by magnetic field can be designed.