An artificial charge-density-wave conductor realized by double quantum wells

TL;DR

This paper reports the creation of an artificial charge-density-wave conductor using double quantum wells in a transistor setup, enabling easier integration and study of CDW phenomena in semiconductor devices.

Contribution

It introduces a novel semiconductor-based artificial CDW conductor fabricated via double quantum wells, overcoming limitations of traditional crystal shapes and sizes.

Findings

Electric field-dependent depinning transport observed

Artificial CDW modulated electron density demonstrated

Potential for integration with semiconductor technology

Abstract

Charge-density-wave (CDW) is a modulation of the conduction electron density in a conductor. Under low temperature, it can spontaneously happen in some compounds that consist of anisotropic one-dimensional crystal structures, via a strong electron-lattice interaction mechanism. Many celebrated phenomena, e.g. non-linear transport, narrow-band noise, mode-locking5 and chaos under AC voltage, etc., have been reported in CDW. However, evaluating the application potential of CDW conductors has been hampered by the inconvenient shapes and sizes of CDW single crystals. Although modern fabrication technology can partly resolve those troubles, (for example, cleaved film and nanowire NbSe3 device), the imperfections induced by fabrication that corrupt measured properties are not easy to control and estimate. Here we demonstrate a convenient CDW conductor fabricated by semiconductor double quantum wells (DQW) in a field-effect transistor (FET) configuration: a modulated electron density in one QW resulted from the charged QW nearby. The electric field dependent depinning transport characteristic of CDW is clearly present. This "artificial" CDW, capable of integrating with semiconductor industry, may give fresh impetus to revive the interests in CDW.