Observation of a Dislocation Related Interfacial Friction Mechanism in Mobile Solid $^4$He
Anna Eyal, Ethan Livne, Emil Polturak

TL;DR
This study investigates the temperature and stress dependence of interfacial friction in solid $^4$He, revealing that dislocation climb dominates the friction mechanism and providing insights into the interface dynamics during disordering.
Contribution
It demonstrates that dislocation climb is the primary source of interfacial friction in solid $^4$He and models the interface as a well-oriented slip-stick system based on experimental data.
Findings
Dislocation climb dominates interfacial friction between 0.5K and 1.8K.
The characteristic energy scale of internal friction is between 3K and 6K.
The interface behaves as a well-oriented slip-stick system.
Abstract
We report a study of the temperature and stress dependence of the friction associated with a relative motion of two masses of solid He in contact. The situation where "two masses" coupled only by friction exists emerges spontaneously during a disordering of a single crystal contained inside a annular sample space of torsional oscillator (TO). Under the torque applied by the oscillating walls of the the TO these "masses" move relative to each other, generating measurable dissipation at their interface. We studied this dissipation between 0.5K and 1.8K in solid samples grown from commercially pure He and from a 100 ppm He-He mixture. The data were analyzed by modelling the TO as a driven harmonic oscillator. In this model, analysis of the resonant frequency and amplitude of the TO yields the temperature dependence of the friction coefficient. By fitting the data to…
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Taxonomy
TopicsQuantum, superfluid, helium dynamics · Superconducting Materials and Applications · High-pressure geophysics and materials
