Transfer-free Grown Bilayer Graphene Transistors for Digital Applications

TL;DR

This paper introduces a transfer-free method to fabricate bilayer graphene transistors directly on silicon wafers using CCVD, achieving high performance suitable for digital nanoelectronics integration.

Contribution

It presents a novel in-situ growth technique for bilayer graphene transistors on silicon wafers, eliminating transfer steps and enabling high on/off ratios for digital applications.

Findings

Achieved on/off-current ratios of 10^7 at room temperature.

Demonstrated direct fabrication of graphene transistors on silicon wafers.

Enabled potential low-cost integration with silicon CMOS technology.

Abstract

We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is determined by the selected CCVD process parameters, e.g. temperature and gas mixture. BiLGFETs exhibit ultra-high on/off-current ratios of 107 at room temperature, exceeding previously reported values by several orders of magnitude. This will allow a simple and low-cost integration of graphene devices for digital nanoelectronic applications in a hybrid silicon CMOS environment for the first time.