Gate defined zero- and one-dimensional confinement in bilayer graphene

TL;DR

This paper demonstrates the fabrication of high-quality bilayer graphene devices with electrostatically defined quantum confinement, showing conductance quantization and Coulomb blockade effects at low temperatures.

Contribution

It introduces a method to create nanoscale confinement in bilayer graphene using patterned gates, enabling precise control of quantum states.

Findings

Observation of conductance quantization in constrictions

Detection of Coulomb blockade in graphene islands

High device quality evidenced by low-temperature measurements

Abstract

We report on the fabrication and measurement of nanoscale devices based on bilayer graphene sandwiched between hexagonal boron nitride bottom and top gate dielectrics. The top gates are patterned such that constrictions and islands can be electrostatically induced by applying appropriate voltages to the gates. The high quality of the devices becomes apparent from conductance quantization in the constrictions at low temperature. The islands exhibit clear Coulomb blockade and single-electron transport.