Novel Silicon n-in-p Pixel Sensors for the future ATLAS Upgrades

TL;DR

This paper evaluates novel n-in-p silicon pixel sensors for the ATLAS detector upgrade, demonstrating their radiation hardness and performance before and after irradiation, supporting their use in HL-LHC conditions.

Contribution

It introduces and characterizes new n-in-p pixel sensors compatible with ATLAS readout chips, highlighting their radiation tolerance and suitability for future collider upgrades.

Findings

Sensors operate effectively after high radiation doses.

Radiation hardness confirmed up to 10^16 n_eq/cm^2.

Successful bump bonding and performance testing.

Abstract

In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the Inner Detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We present the characterization and performance of novel n-in-p planar pixel sensors produced by CiS (Germany) connected by bump bonding to the ATLAS readout chip FE-I3. These results are obtained before and after irradiation up to a fluence of 10^16 1-MeV n_eq/cm^2, and prove the operability of this kind of sensors in the harsh radiation environment foreseen for the pixel system at HL-LHC. We also present an overview of the new pixel production, which is on-going at CiS for sensors compatible with the new ATLAS readout chip FE-I4.