Bandwidth enhancement and optical performances of multiple quantum well transistor lasers

TL;DR

This paper develops a rate-equation model to analyze carrier transport in multiple quantum well transistor lasers, demonstrating significant optical bandwidth enhancement through device optimization.

Contribution

It introduces a detailed rate-equation-based model for MQW transistor lasers and shows how device parameters can be optimized for improved optical bandwidth.

Findings

Optical bandwidth of approximately 60GHz achieved with 5 quantum wells.

Carrier transport effects significantly influence device performance.

Optimization of cavity length and base width enhances optoelectronic characteristics.

Abstract

A detailed rate-equation-based model is developed to study carrier transport effects on optical and electrical characteristics of the Multiple Quantum Well Heterojunction Bipolar Transistor Laser in time-domain. Simulation results extracted using numerical techniques in small-signal regime predict significant enhancement in device optical bandwidth when multiple quantum wells are used. Cavity length and base width are also modified to optimize the optoelectronic performances of the device. An optical bandwidth of \approx 60GHz is achieved in the case of 5 quantum wells each of 70A widths and a cavity length of 200um.