Internal field induced enhancement and effect of resonance in Raman scattering of InAs nanowires

TL;DR

This study investigates how internal electric fields enhance Raman scattering in InAs nanowires, revealing resonance effects linked to dielectric properties and band structure, with implications for nanowire optical characterization.

Contribution

It demonstrates the internal field induced resonance in Raman scattering of InAs nanowires and analyzes the roles of band gap energy and refractive index in this enhancement.

Findings

Resonant Raman scattering is enhanced by internal electric fields in InAs nanowires.

The enhancement correlates with the first higher lying direct band gap (E1) and refractive index.

Differences in electro-optic and deformation potential contributions are discussed.

Abstract

An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the relative contribution of electro-optic effect and deformation potential in Raman scattering of nanowires and bulk InAs over a range of excitation energies is discussed by comparing the intensity ratio of their LO and TO phonon modes.