Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

TL;DR

This paper proposes a method to electrically measure spin-momentum coupling in topological insulators by injecting spin-polarized electrons from silicon, demonstrating a Schottky barrier at the Si-Bi2Se3 interface.

Contribution

It introduces a device structure and analysis method for spin injection from silicon into Bi2Se3, enabling new spintronic device possibilities.

Findings

Schottky barrier height of 0.34 eV at Si-Bi2Se3 interface

Fabrication of devices with exfoliated Bi2Se3 on silicon

Potential for sub-band gap internal photoemission applications

Abstract

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si.