Reduced Dark Counts in Optimized Geometries for Superconducting Nanowire Single photon Detectors

TL;DR

This paper demonstrates that optimizing the bend geometry of superconducting nanowires reduces dark counts and enhances critical current, leading to improved single photon detector performance.

Contribution

It introduces optimized bend designs that minimize current crowding, significantly reducing dark counts without affecting photo-response.

Findings

Optimized bends increase critical current.

Dark counts are significantly reduced.

Photo-response remains unaffected.

Abstract

We have experimentally compared the critical current, dark count rate and photo-response of 100nm wide superconducting nanowires with different bend designs. Enhanced critical current for nanowires with optimally rounded bends, and thus with no current crowding, are observed. Furthermore, we find that the optimally designed bend significantly reduces the dark counts without compromising the photo-response of the device. The results can lead to major improvements in superconducting nanowire single photon detectors.