Measuring roughness of buried interfaces by sputter depth profiling

TL;DR

This study demonstrates that dual beam TOF SIMS combined with MRI modeling can accurately measure nanometer-scale interface roughness in multilayer structures, validated by X-ray reflectivity.

Contribution

It introduces an improved dual beam TOF SIMS method with MRI analysis for high-resolution interface roughness measurement in nanolayers.

Findings

Interfacial roughness of 1.5 nm measured by TOF SIMS.

Validation of TOF SIMS results with X-ray reflectivity.

Roughness attributed to native interface jaggedness, not interdiffusion.

Abstract

In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an improved dual beam approach featuring a low energy normally incident direct current sputtering ion beam (first beam). Intensities of 24Mg+ and 64Zn+ secondary ions generated by a pulsed analysis ion beam (second beam) were measured as a function of sample depth by time-of-flight secondary ion mass spectrometry (TOF SIMS). Experimental results of this dual beam TOF SIMS depth profiling processed in the framework of the mixing-roughness-information (MRI) model formalism demonstrate that such an approach is capable of providing structural information for layers just a few nm thick. Namely, it was established that the interfacial roughness of the MgO/ZnO multilayer structure equals 1.5 nm. This finding by TOF SIMS was cross-validated by independent measurements with specular X-ray reflectivity (XRR) technique. In addition, the TOF SIMS-MRI analysis suggests that the obtained 1.5 nm roughness should be attributed to the native roughness (jagged type) of the interface rather than to interdiffusion at the interface during the ALD synthesis.