Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

TL;DR

This paper presents a theoretical study of tunneling anisotropic magnetoresistance (TAMR) in single-molecule magnet junctions, showing how TAMR varies with magnetization angle and bias voltage, offering insights for spintronic device design.

Contribution

It introduces a theoretical model for TAMR in SMM junctions, revealing how TAMR depends on magnetization angle and bias voltage, and proposing its use as a probe for the SMM's easy axis.

Findings

TAMR varies with the angle between magnetization and easy axis.

Bias voltage can tune the magnitude and sign of TAMR.

TAMR can serve as an experimental probe for SMM properties.

Abstract

We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and sign of TAMR are tunable by the bias voltage, suggesting a promising TAMR based spintronic molecule-device.