Theory of Defect-Induced Kondo Effect in Graphene: Numerical Renormalization Group Study

TL;DR

This paper develops an effective model for the defect-induced Kondo effect in graphene, transforming it into a pseudogap Anderson model and using numerical renormalization group analysis to explain experimental gate-voltage dependence of the Kondo temperature.

Contribution

It introduces a new effective model that captures the defect-induced Kondo effect in graphene and applies NRG to explain experimental observations.

Findings

The model maps to a single-channel pseudogap Anderson model with finite chemical potential.

Numerical results clarify the gate-voltage dependence of the Kondo temperature.

The framework aligns well with experimental data.

Abstract

An effective model that describes the Kondo effect due to a point defect in graphene is developed, taking account of the electronic state and the lattice structure of the defect. It is shown that this model can be transformed into a single-channel pseudogap Anderson model with a finite chemical potential. On the basis of the numerical renormalization group method, it is clarified that the experimentally observed gate-voltage dependence of the Kondo temperature is understood in this framework.