Geant4 Simulation of a filtered X-ray Source for Radiation Damage Studies

TL;DR

This paper demonstrates how Geant4 simulations can accurately model filtered X-ray spectra from industrial tubes and predict dose rates in electronic device layers, validated against precise measurements.

Contribution

It introduces a method to simulate filtered X-ray spectra with Geant4 and compares results with experimental data for validation.

Findings

Simulated spectra match measured spectra accurately.

Dose rates in silicon and silicon dioxide layers can be deduced from simulations.

Validated approach for radiation damage studies in electronics.

Abstract

Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations.