Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

TL;DR

This paper introduces a pulsed CVD method that suppresses multilayer graphene formation on copper, resulting in large-area, high-quality single-layer graphene with high mobility for electronic applications.

Contribution

The study demonstrates a novel pulsed CVD technique that effectively inhibits multilayer growth during graphene synthesis on copper, achieving homogeneous single-layer graphene at centimeter scale.

Findings

Pulsed CVD suppresses multilayer regions.

Transferred graphene exhibits mobilities above 5000 cm^2.V^-1.s^-1.

Method produces large-area homogeneous single-layer graphene.

Abstract

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.