Junctionless dual-gate electrostatic modulation of self-aligned oxide channels by chitosan-based proton conductors

TL;DR

This paper demonstrates a novel dual-gate junctionless oxide transistor on paper substrates, using chitosan-based proton conductors for electrostatic modulation, enabling low-voltage operation and logic functions suitable for portable electronics.

Contribution

It introduces a self-aligned junctionless oxide transistor with dual-gate electrostatic control on paper, utilizing chitosan-based proton conductors for the first time.

Findings

Effective tuning from depletion to enhancement mode

Demonstration of OR logic gate operation

Potential for portable paper electronic devices

Abstract

Dual-gate electrostatic modulation gives an attractive approach for transistors performance improvement, threshold voltage (Vth) and operation mode modulation, which is favorable for chemical sensor and logic applications. Here, a self-aligned junctionless semiconducting oxide channels are dual-gate electrostatic modulated by solution-processed chitosan-based proton conductors on paper substrates. The low-voltage junctionless paper transistors can be effectively tuned from depletion mode to enhancement mode by the second in-plane gate. OR logic gate was experimentally demonstrated on such dual-in-plane gate junctionless transistors. Such dual-gate organic/inorganic hybrid paper transistors are promising for portable paper electronics.