Epitaxial (111) Films of Cu, Ni, and Cu$_xNi$_y$ on {\alpha}-Al$_2$O$_3$(0001) for Graphene Growth by Chemical Vapor Deposition
David L. Miller, Mark W. Keller, Justin M. Shaw, Ann N. Chiaramonti,, Robert R. Keller

TL;DR
This study evaluates epitaxial (111) textured Cu, Ni, and CuNi films on Al2O3 substrates as substrates for graphene growth via chemical vapor deposition, analyzing their structure, orientation, and impact on graphene quality.
Contribution
It demonstrates the epitaxial growth of (111) textured Cu, Ni, and CuNi films on Al2O3 and investigates their effects on the uniformity of graphene produced.
Findings
All films exhibited (111) texture with 60° in-plane grain orientation differences.
Reactive sputtering of Al improved Ni film orientation significantly.
Graphene on Ni(111) films was more uniform than on polycrystalline Ni/SiO2.
Abstract
Films of (111)-textured Cu, Ni, and CuNi were evaluated as substrates for chemical vapor deposition of graphene. A metal thickness of 400 nm to 700 nm was sputtered onto a substrate of AlO(0001) at temperatures of 250 C to 650 C. The films were then annealed at 1000 C in a tube furnace. X-ray and electron backscatter diffraction measurements showed all films have (111) texture but have grains with in-plane orientations differing by . The in-plane epitaxial relationship for all films was ||. Reactive sputtering of Al in O before metal deposition resulted in a single in-plane orientation over 97 % of the Ni film but had no significant effect on the Cu grain structure. Transmission electron microscopy showed a clean Ni/AlO interface, confirmed the epitaxial relationship, and showed that…
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