Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments

TL;DR

This study investigates graphene formation on SiC(000-1) surfaces in disilane and neon environments, revealing unique interface structures and bonding characteristics that differ from vacuum conditions, with oxidation affecting the interface structure.

Contribution

It provides new insights into the interface structures and bonding mechanisms of graphene on SiC(000-1) in different environments, highlighting the effects of oxidation.

Findings

Distinct interface structures in disilane and neon environments

Identification of a graphene-like interface layer with specific diffraction patterns

Oxidation modifies and eliminates the interface structure

Abstract

The formation of graphene on the SiC(000-1) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different than for graphene formation in vacuum. A complex low-energy electron diffraction pattern with rt(43) x rt(43)-R\pm7.6{\deg} symmetry is found to form at the interface. An interface layer consisting essentially of graphene is observed, and it is argued that the manner in which this layer covalently bonds to the underlying SiC produces the rt(43) x rt(43)-R\pm7.6{\deg} structure [i.e. analogous to the 6rt(3) x 6rt(3)-R30{\deg} "buffer layer" that forms on the SiC(0001) surface (the Si-face)]. Oxidation of the surface is found to modify (eliminate) the rt(43) x rt(43)-R\pm7.6{\deg} structure, which is interpreted in the same manner as the known "decoupling" that occurs for the Si-face buffer layer.