High-field magnetoresistance revealing scattering mechanisms in graphene

TL;DR

This paper investigates how different scattering mechanisms influence high-field magnetoresistance in graphene nanoribbons, offering insights into substrate effects and potential methods for identifying scattering types.

Contribution

It introduces a simulation-based analysis linking scattering mechanisms to magnetoresistance behavior and explains substrate-dependent experimental observations.

Findings

Scattering type significantly impacts magnetoresistance in graphene.

Magnetoresistance peaks tend to align with fractionally quantized values.

Differences in substrate influence the scattering mechanisms and resistance behavior.

Abstract

We show that the type of charge carrier scattering significantly affects the high-field magnetoresistance of graphene nanoribbons. This effect has potential to be used in identifying the scattering mechanisms in graphene. The results also provide an explanation for the experimentally found, intriguing differences in the behavior of the magnetoresistance of graphene Hall bars placed on different substrates. Additionally, our simulations indicate that the peaks in the longitudinal resistance tend to become pinned to fractionally quantized values, as different transport modes have very different scattering properties.