Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts

TL;DR

This paper demonstrates through simulations that gate modulation of contacts in short-channel carbon nanotube FETs enhances their performance, leading to better subthreshold swings and scaling, advancing high-performance nanotube electronics.

Contribution

It reveals that gate-controlled contact modulation in short-channel CNT FETs improves device performance, a novel insight distinct from traditional Schottky barrier effects.

Findings

Gate strongly modulates contact properties.

Improved subthreshold swing in short channels.

Enhanced scaling behavior of CNT FETs.

Abstract

We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is distinct from that observed in Schottky barrier carbon nanotube transistors. This modulation of the contacts by the gate allows for the realization of superior subthreshold swings for short channels, and improved scaling behavior. These results further elucidate the behavior of carbon nanotube-metal contacts, and should be useful in the optimization of high-performance carbon nanotube electronics.