Change in Stacking Order and Lifshitz transition in Bi-layer Graphene
Partha Goswami

TL;DR
This paper studies how an external electric field induces a Lifshitz transition in bilayer graphene with AB stacking, revealing topological changes in the electronic structure that are tunable by bias and affected by many-body effects.
Contribution
It demonstrates that the Lifshitz transition in bilayer graphene is bias-tunable and explores the impact of many-body effects on this tunability, also comparing different stacking configurations.
Findings
Lifshitz transition is bias-tunable in AB-stacked bilayer graphene.
Trigonal warping causes splitting into four pockets in the energy bands.
Many-body effects significantly influence the bias-tunability of the transition.
Abstract
We consider the AB-(Bernal) stacking for the bi-layer graphene (BLG) system and assume that a perpendicular electric field is created by the external gates deposited on the BLG surface. In the basis (A1, B2, A2, B1) for the valley K and the basis (B2, A1, B1, A2) for the valley K', we show the occurrence of trigonal warping [ see A. S. N\'u\~nez et al.,arXiv:1012.4318], that is, splitting of the energy bands or the density of states on the kx - ky plane into four pockets comprising of the central part and three legs due to a (skew) interlayer hopping between A1 and B2. The hopping between A1 - B2 leads to a concurrent velocity v3in addition to the Fermi velocity vF. Our noteworthy outcome is that the above-mentioned topological change, referred to as the Lifshitz transition [I. M. Lishitz, Zh. Exp. Teor. Fiz., 38, 1565 (1960) (Sov. Phys. JETP 11, 1130 (1960));Y. Lemonik, I.L. Aleiner,…
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Surface and Thin Film Phenomena
