Loss compensation in Metamaterials through embedding of active transistor based negative differential resistance circuits

TL;DR

This paper introduces an all-electronic method for loss compensation in metamaterials by embedding active transistor-based NDR circuits, enabling tunable loss correction over a broad frequency range, including terahertz.

Contribution

It demonstrates the integration of active NDR circuits into metamaterials for effective loss compensation, a novel approach in the field.

Findings

Successful design and simulation of loss-compensated metamaterials

Experimental validation showing improved performance with NDR circuits

Broadband tunability of loss compensation achieved

Abstract

This paper presents an all-electronic approach for loss compensation in metamaterials. This is achieved by embedding active-transistors based negative differential resistance (NDR) circuits in each unit cell of the metamaterial lattice. NDR circuits provide tunable loss compensation over a broad frequency range limited only by the maximum operating frequency of transistors that is reaching terahertz values in newer semiconductor processes. Design, simulation and experimental results of metamaterials composed of split ring resonators (SRR) with and without loss compensation circuits are presented.