Very strong reduction of 1/f noise by Carbon doping in epitaxial Fe/MgO(100)12ML/Fe magnetic tunnel junctions with large density of barrier defects

TL;DR

This study demonstrates that Carbon doping significantly reduces 1/f noise in epitaxial Fe/MgO(100) magnetic tunnel junctions by affecting defect relaxation and interface properties, improving electron transport.

Contribution

It reveals that light element doping, specifically Carbon, can effectively lower noise levels and enhance performance in magnetic tunnel junctions with high defect densities.

Findings

Carbon doping reduces 1/f noise in magnetic tunnel junctions.

Doping influences defect relaxation and interface reconstruction.

Enhanced electron transport observed with Carbon doping.

Abstract

We report on the strong influence of Carbon doping on 1/f noise in fully epitaxial Fe/MgO(100)12ML/Fe magnetic tunnel junctions in comparison with undoped junctions with a large density of barrier defects. Carbon influences the relaxation of defects, the reconstruction of the interface and the symmetry transformation of interface resonance states, which are suggested to contribute to the strong reduction of the 1/f noise. Our study demonstrates that doping with light elements could be a versatile tool to improve the electron transport and noise in epitaxial magnetic tunnel junctions with large density of barrier defects.