Quantum Adsorption of an Electron to Porous Silicon

TL;DR

This paper applies the Zhang and Clougherty theory to numerically analyze the probability of low-energy electrons adsorbing onto nanoporous silicon surfaces, providing detailed computational insights.

Contribution

It offers detailed numerical calculations of electron adsorption probabilities on nanoporous silicon using an established theoretical framework.

Findings

Calculated adsorption probabilities for low-energy electrons

Provided detailed numerical data supporting the theory

Enhanced understanding of electron-surface interactions in nanoporous silicon

Abstract

Using the theory of Zhang and Clougherty [Phys. Rev. Lett. 108, 173202 (2012)], we provide detailed supporting information concerning the numerical calculations of the probability ${\it s}(E)$ for a low-energy electron with incident energy E adsorbing to the surface of nanoporous silicon.