Breakdown of the integer and fractional quantum Hall states in a quantum point contact

TL;DR

This study investigates the breakdown of integer and fractional quantum Hall states in a quantum point contact, revealing unique dependencies on device parameters that challenge existing theories.

Contribution

It presents new experimental observations of fractional quantum Hall state breakdown in a QPC, highlighting opposite width dependence not explained by current models.

Findings

Critical current varies with magnetic field, gate voltage, and width.

Fractional states show opposite width dependence compared to integer states.

Current theories do not account for the observed behavior.

Abstract

The integer and fractional quantum Hall states are known to break down at high dc bias, exhibiting deviation from the ideal incompressible behavior. We measure breakdown of the \nu = 2, 3, 4, 5 integer and the \nu = 4/3 and 5/3 fractional states in a quantum point contact (QPC) of lithographic width ~600 nm. Dependence of the critical current on magnetic field, QPC gate voltage, and QPC width are presented. Of particular interest, the critical current of the 4/3 and 5/3 fractional states shows the opposite dependence on QPC width compared to the integer states. This previously unobserved result is not explained by current theories of breakdown.