Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction

TL;DR

This paper demonstrates a novel single electron tunneling diode using a vertical graphene two-barrier junction, highlighting its potential for vertical graphene transistors through quantum tunneling control.

Contribution

It introduces a vertical graphene two-barrier junction device with unidirectional electron transfer, a new approach differing from traditional horizontal graphene devices.

Findings

Successful fabrication of a vertical graphene tunneling diode

Observation of unidirectional electron transfer due to junction asymmetry

Potential for vertical graphene transistor applications

Abstract

Usually, graphene is used in its horizontal directions to design novel concept devices. Here, we report a single electron tunneling diode based on quantum tunneling through a vertical graphene two-barrier junction. The junction is formed by positioning a scanning tunnelling microscopy (STM) tip above a graphene nanoribbon that was deposited on a graphite surface. Because of the asymmetry of the two-barrier junction, the electrons can unidirectional transfer from the tip to the graphene nanoribbon but not from the graphene to the tip. This result opens intriguing opportunities for designing new type of graphene transistors in its vertical direction.