Structural modification in Au/Si(100) system: Role of surface oxide and vacuum level
A. Rath (1), J. K Dash (1), R. R. Juluri (1), P. V. Satyam (1) ((1), Institute of Physics, Sachivalaya Marg, Bhubaneswar, India)

TL;DR
This study investigates how surface oxide and vacuum conditions influence the structural modifications of gold nanostructures on Si(100), revealing that surface oxide presence affects corner rounding and nanostructure shape during annealing.
Contribution
It provides new insights into the role of surface oxide and vacuum environment in controlling the shape and edge features of gold nanostructures on silicon surfaces.
Findings
Corner rounding is more prominent in low vacuum conditions.
In UHV, sharp-cornered structures are formed without oxide influence.
Surface oxide presence leads to different nanostructure morphologies.
Abstract
To understand surface structural modifications for Au/Si (100) system, a thin gold film of ~2.0 nm was deposited under ultra high vacuum (UHV) condition on reconstructed Si surfaces using molecular beam epitaxy (MBE). Post annealing was done at 500{\deg}C in three different vacuum conditions: (1) low vacuum (LV) furnace (10-2 mbar), (2) UHV (10-10 mbar) (MBE chamber), (3) high vacuum (HV) chamber. The variation in the overall shape of the gold nanostructures and finer changes at the edges, like rounding of corners has been reported in this work. Although well aligned nano rectangles were formed in both HV and LV cases, corner rounding is more prominent in LV case. Furthermore in UHV case, random structures were formed having sharp corners. In all the above three cases, samples were exposed to air (for half an hour) before annealing. To study the effect of surface oxide, in-situ…
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Taxonomy
TopicsSurface and Thin Film Phenomena · Semiconductor materials and interfaces · Electron and X-Ray Spectroscopy Techniques
