Integrating Functional Oxides with Graphene

TL;DR

This paper reviews recent research on graphene-oxide hybrid structures, focusing on how dielectric oxides like PZT and HfO_2 influence graphene's transport properties, mobility, and device performance.

Contribution

It provides a comprehensive analysis of how ferroelectric and high-k oxides affect graphene's electronic transport and device characteristics, highlighting new insights into scattering mechanisms.

Findings

Graphene on PZT shows up to tenfold mobility increase.

Resistance hysteresis linked to ferroelectric surface chemistry.

Surface phonons impact mobility and high-bias performance.

Abstract

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the intrinsic properties of graphene is also critical to fundamental studies and technological development of graphene. Here we review our recent effort on understanding the transport properties of graphene interfaced with ferroelectric Pb(Zr,Ti)O_3 (PZT) and high-k HfO_2. Graphene field effect devices prepared on high-quality single crystal PZT substrates exhibit up to tenfold increases in mobility compared to SiO_2-gated devices. An unusual and robust resistance hysteresis is observed in these samples, which is attributed to the complex surface chemistry of the ferroelectric. Surface polar optical phonons of oxides in graphene transistors play an important role in the device performance. We review their effects on mobility and the high source-drain bias saturation current of graphene, which are crucial for developing graphene-based room temperature high-speed amplifiers. Oxides also introduce scattering sources that limit the low temperature electron mobility in graphene. We present a comprehensive study of the transport and quantum scattering times to differentiate various scattering scenarios and quantitatively evaluate the density and distribution of charged impurities and the effect of dielectric screening. Our results can facilitate the design of multifunctional nano-devices utilizing graphene-oxide hybrid structures.