Raman Spectroscopy of magneto-phonon resonances in Graphene and Graphite

TL;DR

This paper reviews the fundamentals and experimental observations of magneto-phonon resonances in graphene and graphite, highlighting their dependence on disorder and the resulting complex phonon behaviors.

Contribution

It provides a comprehensive review of magneto-phonon resonance phenomena in graphene and graphite, including recent experimental findings and theoretical insights.

Findings

Observation of phonon splitting and anti-crossing in graphene

Dependence of MPR on disorder in graphene layers

Experimental Raman evidence of MPR in graphite

Abstract

The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors, in two-dimensional systems and in quantum dots. Recently there has been significant interest in the MPR interactions of the Dirac fermion magnetoexcitons in graphene, and a rich splitting and anti-crossing phenomena of the even parity E2g long wavelength optical phonon mode have been theoretically proposed and experimentally observed. The MPR has been found to crucially depend on disorder in the graphene layer. This is a feature that creates new venues for the study of interplays between disorder and interactions in the atomic layers. We review here the fundamentals of MRP in graphene and the experimental Raman scattering works that have led to the observation of these phenomena in graphene and graphite.