High carrier mobility in transparent Ba1-xLaxSnO3 crystals with a wide band gap

TL;DR

This paper reports the discovery of high carrier mobility in Ba1-xLaxSnO3 crystals with a wide band gap, highlighting its potential for transparent conductive applications.

Contribution

It demonstrates that (Ba,La)SnO3 can achieve high mobility despite a large band gap, which is a novel finding for transparent conductive oxides.

Findings

Hall mobility of ~103 cm2 V-1s-1 at room temperature

Band gap measured at 4.05 eV, larger than other transparent oxides

Potential for use in transparent conductors and multilayer devices

Abstract

We discovered that perovskite (Ba,La)SnO3 can have excellent carrier mobility even though its band gap is large. The Hall mobility of Ba0.98La0.02SnO3 crystals with the n-type carrier concentration of \sim 8-10\times10 19 cm-3 is found to be \sim 103 cm2 V-1s-1 at room temperature, and the precise measurement of the band gap \Delta of a BaSnO3 crystal shows \Delta=4.05 eV, which is significantly larger than those of other transparent conductive oxides. The high mobility with a wide band gap indicates that (Ba,La)SnO3 is a promising candidate for transparent conductor applications and also epitaxial all-perovskite multilayer devices.