Work, free energy and dissipation in voltage driven single-electron transitions

TL;DR

This paper applies Jarzynski's framework to analyze dissipation in voltage-driven single-electron transitions, deriving expressions for dissipated work and relating it to known dissipation measures, with implications for gate protocols.

Contribution

It introduces a method to calculate dissipated work in single-electron systems using Jarzynski's approach, connecting it to existing dissipation concepts in the context of voltage-driven transitions.

Findings

Dissipated work expression derived for single-electron boxes.

Established equivalence between dissipated work and dissipation Q in certain protocols.

Applicable to voltage-driven single-electron transition analysis.

Abstract

We apply the general procedure presented by Jarzynski in [1] to the problem of dissipation in a voltage-driven single-electron box. We obtain the expression of dissipated work, and find its relation to the dissipation Q obtained in [2]. We show that the two quantities are identical in common gate protocols where the system makes a transition for sure.