Self-compensation in highly n-type InN
C. Rauch (1), F. Tuomisto (1), P. D. C. King (2), T. D. Veal (3), H., Lu (4), and W. J. Schaff (4) ((1) Department of Applied Physics, Aalto, University, Finland, (2) School of Physics, Astronomy, University of St, Andrews, UK, (3) Stephenson Institute for Renewable Energy
TL;DR
This paper investigates the microscopic origins of self-compensation in highly n-type InN using positron annihilation spectroscopy, revealing negatively charged indium vacancy complexes and other defects as key factors.
Contribution
It provides new insights into the defect mechanisms causing self-compensation in highly n-type InN, combining experimental and theoretical approaches.
Findings
Negatively charged indium vacancy complexes cause significant compensation.
Additional acceptor-type defects act as scattering centers.
Self-compensation affects electron mobility in InN.
Abstract
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
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