Tunable optical Aharonov-Bohm effect in a semiconductor quantum ring
Bin Li, F. M. Peeters

TL;DR
This paper demonstrates how an electric field can tune the Aharonov-Bohm effect in semiconductor quantum rings, enabling control over its strength and periodicity for both electrons and excitons.
Contribution
It introduces a method to modulate the AB effect in quantum rings via electric fields and analyzes the influence of strain on this phenomenon.
Findings
Electric field can switch wave functions between QD-like and ring-like.
The AB effect's strength and periodicity are tunable with electric fields.
Strain affects the potential and modifies the AB effect.
Abstract
By applying an electric field perpendicular to a semiconductor quantum ring we show that it is possible to modify the single particle wave function between quantum dot (QD)-like to ring-like. The constraints on the geometrical parameters of the quantum ring to realize such a transition are derived. With such a perpendicular electric field we are able to tune the Aharanov-Bohm (AB) effect for both single particles and for excitons. The tunability is in both the strength of the AB-effect as well as in its periodicity. We also investigate the strain induce potential inside the self assembled quantum ring and the effect of the strain on the AB effect.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
