Laser written junctionless dual in-plane-gate thin-film transistors with AND Logic function

TL;DR

This paper presents a simple laser scribing method to fabricate low-voltage junctionless in-plane-gate TFT arrays with integrated AND logic function, eliminating the need for masks or photolithography.

Contribution

It introduces a novel maskless laser scribing process for junctionless TFTs with integrated logic functions, simplifying fabrication and enabling low-voltage operation.

Findings

Effective field-effect modulation achieved with mobility of ~12.6cm2/Vs

Junctionless TFTs fabricated without source/drain junctions

AND logic function demonstrated on dual in-plane-gate device

Abstract

A simple laser scribing process has been developed to fabricate low-voltage junctionless in-plane-gate thin-film transistors (TFTs) arrays without any mask and photolithography. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same indium-tin-oxide films without any intentional source/drain junction deposition process. Effective field-effect modulation of the drain current has been realized on such in-plane-gate device with a field-effect mobility of ~12.6cm2/Vs. At last, AND gate logic function was demonstrated on dual in-plane-gate device.