Modeling the underlying mechanisms for organic memory devices: Tunneling, electron emission and oxygen adsorbing

TL;DR

This paper combines experimental and theoretical approaches to understand the mechanisms behind memory and NDR effects in organic devices, proposing a simple model that accurately matches experimental results and explains the phenomena.

Contribution

It introduces a one-dimensional metallic island array model and uses scattering operator methods to explain memory and NDR effects in organic memory devices, aligning theory with experiments.

Findings

The model accurately reproduces experimental I-V curves.

Memory and NDR effects are explained by tunneling and electron emission mechanisms.

Oxygen pressure influences device behavior as demonstrated experimentally.

Abstract

We present a combined experimental and theoretical study to get insight into both memory and negative differential resistance (NDR) effect in organic memory devices. The theoretical model we propose is simply a one-dimensional metallic island array embedding within two electrodes. We use scattering operator method to evaluate the tunneling current among the electrode and islands to establish the basic bistable I-V curves for several devices. The theoretical results match the experiments very well, and both memory and NDR effect could be understood comprehensively. The experimental correspondence, say, the experiment of changing the pressure of oxygen, is addressed as well.