Size-dependent Transport Study of In0.53Ga0.47As Gate-all-around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

TL;DR

This study investigates how reducing the size of InGaAs nanowire MOSFETs enhances their electrical performance due to quantum effects and volume inversion, supported by experimental data and quantum simulations.

Contribution

It provides a systematic experimental analysis of size-dependent transport in InGaAs nanowire MOSFETs and compares volume inversion effects with silicon counterparts.

Findings

Smaller nanowires exhibit higher on-current and mobility.

Quantum confinement enhances device performance at reduced dimensions.

Volume inversion occurs at larger sizes in InGaAs compared to silicon.

Abstract

InGaAs gate-all-around nanowire MOSFETs with channel length down to 50nm have been experimentally demonstrated by top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance and effective mobility due to stronger quantum confinement and the volume inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.