White Light Interferometry for Quantitative Surface Characterization in Ion Sputtering Experiments

TL;DR

White light interferometry (WLI) provides high-resolution, non-contact 3D surface imaging for ion sputtering experiments, enabling precise surface characterization, depth profiling, and process optimization with advantages over traditional microscopy methods.

Contribution

This paper demonstrates the application of WLI for quantitative surface analysis in ion sputtering, including depth calibration, crater shape optimization, and surface processing characterization.

Findings

WLI achieves ~1 μm lateral and 1 nm depth resolution.

WLI depth profiles align with TRIM simulations for ion implants.

High depth resolution of 12.5 nm demonstrated on processed surfaces.

Abstract

White light interferometry (WLI) can be used to obtain surface morphology information on dimensional scale of millimeters with lateral resolution as good as ~1 {\mu}m and depth resolution down to 1 nm. By performing true three-dimensional imaging of sample surfaces, the WLI technique enables accurate quantitative characterization of the geometry of surface features and compares favorably to scanning electron and atomic force microscopies by avoiding some of their drawbacks. In this paper, results of using the WLI imaging technique to characterize the products of ion sputtering experiments are reported. With a few figures, several example applications of the WLI method are illustrated when used for (i) sputtering yield measurements and time-to-depth conversion, (ii) optimizing ion beam current density profiles, the shapes of sputtered craters, and multiple ion beam superposition and (iii) quantitative characterization of surfaces processed with ions. In particular, for sputter depth profiling experiments of 25Mg, 44Ca and 53Cr ion implants in Si (implantation energy of 1 keV per nucleon), the depth calibration of the measured depth profile curves determined by the WLI method appeared to be self-consistent with TRIM simulations for such projectile-matrix systems. In addition, high depth resolution of the WLI method is demonstrated for a case of a Genesis solar wind Si collector surface processed by gas cluster ion beam: a 12.5 nm layer was removed from the processed surface, while the transition length between the processed and untreated areas was 150 {\mu}m.