Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

TL;DR

This paper reports on the fabrication and characterization of graphene nanoribbon transistors made from wafer-scale CVD-grown graphene, demonstrating a temperature-dependent bandgap opening and high current modulation.

Contribution

It introduces a method to fabricate GNR transistors on wafer-scale CVD graphene and provides evidence of a tunable bandgap in these nanostructures.

Findings

Drain-current modulation reaches 10^6 at 4 K

Estimated bandgap of about 0.1 eV in GNRs

Strong temperature dependence indicates bandgap opening

Abstract

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show drain-current modulation of approximately 10 at 300 K, increasing to nearly 106 at 4 K. The strong temperature dependence of the minimum current indicates the opening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimated to be around 0.1 eV by differential conductance methods. This work highlights the development of CVD-grown large-area graphene and demonstrates the opening of a bandgap in nanoribbon transistors.