Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

TL;DR

This paper reports the development of WS2-based 2D transistors that exhibit high on/off ratios, ambipolar conduction, and photoresponse at room temperature, highlighting their potential for future electronic and optical applications.

Contribution

The work demonstrates chemically synthesized WS2 transistors with high performance metrics and ambipolar behavior, advancing 2D material device technology.

Findings

Achieved ~10^5 on/off current ratio at room temperature

Demonstrated ambipolar conduction in WS2 transistors

Exhibited visible light photoresponse

Abstract

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices.