Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor

TL;DR

This paper introduces a simple, junctionless transparent thin film transistor made from heavily-doped indium-tin-oxide, demonstrating high performance and potential for low-cost electronic applications.

Contribution

The study presents the first demonstration of a junctionless, transparent ITO-based thin film transistor with a simplified fabrication process and enhanced performance using a hybrid dielectric stack.

Findings

High-performance junctionless transistor achieved

Enhanced device performance with hybrid dielectric stack

Potential for low-cost, transparent electronic devices

Abstract

Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions. Thin-film transistors need metal-semiconductor junctions for injecting and extracting electrons from their channels. Here, by coating a heavily-doped thin indium-tin-oxide (ITO) film through a shadow mask onto a biopolymer chitosan/ITO/glass substrate, we can have a high-performance junctionless transparent organic-inorganic hybrid thin film transistor. This could be the simplest transistor in the world, to our knowledge, not only in its structure, but also its fabrication process. In addition, the device performance is found to be greatly enhanced using a reinforced chitosan/SiO2 hybrid bilayer dielectric stack. Our results clearly show that this architecture can lead to a new class of low-cost transistors.