Kinetic Monte Carlo simulations inspired by epitaxial graphene growth
J H Lloyd-Williams

TL;DR
This paper uses kinetic Monte Carlo simulations to explore epitaxial graphene growth, revealing that cluster attachment mechanisms influence island growth dynamics and nucleation behavior, aligning with experimental observations.
Contribution
The study introduces a model of atom cluster attachment in epitaxial growth, highlighting the role of tetramer dynamics in island formation and growth.
Findings
Island growth velocity varies with the fourth power of supersaturation.
Energy barriers for tetramer breakup and attachment influence nucleation.
Adatom density at nucleation increases with temperature under certain conditions.
Abstract
Graphene, a flat monolayer of carbon atoms packed tightly into a two dimensional hexagonal lattice, has unusual electronic properties which have many promising nanoelectronic applications. Recent Low Energy Electron Microscopy (LEEM) experiments show that the step edge velocity of epitaxially grown 2D graphene islands on Ru(0001) varies with the fifth power of the supersaturation of carbon adatoms. This suggests that graphene islands grow by the addition of clusters of five atoms rather than by the usual mechanism of single adatom attachment. We have carried out Kinetic Monte Carlo (KMC) simulations in order to further investigate the general scenario of epitaxial growth by the attachment of mobile clusters of atoms. We did not seek to directly replicate the Gr/Ru(0001) system but instead considered a model involving mobile tetramers of atoms on a square lattice. Our results show that…
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