Bipolar Charge Plasma Transistor: A Novel Three Terminal Device

TL;DR

This paper introduces a novel lateral Bipolar Charge Plasma Transistor (BCPT) that uses metal work-functions to form charge plasma regions, offering improved current gain and addressing doping challenges in ultra-thin SOI structures.

Contribution

The paper presents a new BCPT design using charge plasma formation via metal work-functions, eliminating doping issues and enhancing transistor performance.

Findings

BCPT shows higher current gain than conventional BJTs.

Simulation confirms BCPT's effectiveness in ultra-thin SOI structures.

Doping-free charge plasma formation simplifies fabrication.

Abstract

A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter, base and collector regions of a lateral NPN transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor with identical dimensions. Our simulation results demonstrate that the BCPT concept will help us realize a superior bipolar transistor in terms of a high current gain compared to a conventional BJT. This BCPT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets which are serious issues in ultra thin SOI structures.