Electrochemical integration of graphene with light absorbing copper-based thin films

TL;DR

This paper introduces an electrochemical method to integrate graphene with copper-based thin films, enhancing optoelectronic device performance by combining graphene's properties with light-sensitive copper alloys.

Contribution

It demonstrates a novel electrochemical approach for integrating graphene with copper-based alloys, optimizing film deposition and photoconductivity for optoelectronic applications.

Findings

Graphene transferred to glass serves as a robust substrate for Cu_xS film deposition.

Growth parameters significantly influence the morphology and photoconductivity of Cu_xS films.

Electrochemical characterization confirms effective integration and photoconductive behavior.

Abstract

We present an electrochemical route for the integration of graphene with light sensitive copper-based alloys used in optoelectronic applications. Graphene grown using chemical vapor deposition (CVD) transferred to glass is found to be a robust substrate on which photoconductive Cu_{x}S films of 1-2 um thickness can be deposited. The effect of growth parameters on the morphology and photoconductivity of Cu_{x}S films is presented. Current-voltage characterization and photoconductivity decay experiments are performed with graphene as one contact and silver epoxy as the other.